Proton irradiation effects on GaN-based epitaxial structures
نویسندگان
چکیده
منابع مشابه
Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors
AlGaN/GaN high electron mobility transistors (HEMTs) were exposed to 3 MeV protons at fluences of 6 10, 4 10 and 1 10 protons/cm. The drain saturation currents decreased by 20% and the maximum transconductance decreased by 5% at the highest fluence. As the fluence increased, the threshold voltage shifted more positive values. After proton irradiation, the gate leakage current increased. The Sch...
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Proton irradiation effects on strained Si 1.XGeX/Si heterostructures have been studied. For the experiment, p+-Sil -xGex/p--Si heterojunction diodes were fabricated by molecular beam epitax y (MBE) growth of strained p+boron doped SiGe layers on p -Si(100) substrates. Due to the valence band discontinuity between SiGe and Si layers, and degenerate doping in the SiGe layer, the characteristics o...
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Abstract--The effects of 63MeV proton irradiation on SiGe:C HBTs are reported for the first time. The dc characteristics and neutral base recombination of these SiGe:C HBTs are investigated for proton fluences up to 5×10 p/cm. A comparison is made with SiGe HBTs fabricated in the same technology. Despite the fact that these SiGe:C HBTs degrade significantly during proton exposure, there is no i...
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AlGaN/GaN/Be:GaN heterostructures have been grown by rf-plasma molecular beam epitaxy on freestanding semi-insulating GaN substrates, employing unintentionally-doped (UID) GaN buffer layers with thicknesses, dUID, varying between 50 nm and 500 nm. We have found that the heterostructures with UID buffers thicker than 200 nm exhibit much improved Hall properties and inter-device isolation current...
متن کاملProton Irradiation
' The kinetics of recuperation following initial doses of 470 rads of 56 Mev protons and 350 rads of Co" 7 radiation were investigated by means of the paired-dose method. By using semilog plots, recovery half-times of 4.85 ± .85 days and 2.02 ± .45 day» were found after initial doses of the protons and Co' 7 radiation, respectively.
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2020
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/1697/1/012073